Pixel-to-Pixel isolation by Deep Trench technology: Application to CMOS Image Sensor
نویسندگان
چکیده
Deep Trench technology for CMOS image sensor was successfully developed and industrialized for bestin-class 1.4μm pixel Front-Side Illumination (FSI) technology. The performance achievements on QE both on and off-axis without any degradation of other pixel parameters show the need of a perfect pixel isolation for better color fidelity. Comparison with other pixel isolation architectures show that Deep Trench is the best approach to suppress electrical crosstalk.
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تاریخ انتشار 2011